SpecificationsGateDrain Voltage (Note 1), VGD .....................................................................30VGateSource Voltage (Note 1), VGS ...................................................................30VGate Current, IG ...............................................................
NTE489: SpecificationsGateDrain Voltage (Note 1), VGD .....................................................................30VGateSource Voltage (Note 1), VGS ..................................................
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GateDrain Voltage (Note 1), VGD .....................................................................30V
GateSource Voltage (Note 1), VGS ...................................................................30V
Gate Current, IG ............................................................................................50mA
Total Device Dissipation (TA = +25), PD...................................................... 360mW
Derate Above 25.................................................................................... 3.27mW/
Operating Junction Temperature Range, TJ .....................................55° to +135
Storage Temperature Range, Tstg ...................................................55° to +150
Lead Temperature (During Soldering, 1/16" from case for 10sec), TL ............+300