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NTE338F

Features: Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dBEfficiency = 45 Intermodulation Distortion @ 20W (PEP): IMD = 30dB Min 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWRSpecificationsCollectorEmitter Voltage, VCEO . . . . . . . . . . ....

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SeekIC No. : 004436185 Detail

NTE338F: Features: Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dBEfficiency = 45 Intermodulation Distortion @ 20W (PEP): IMD = 30dB Min 100% Tested for Load Mismatched...

NTE338F Data Sheet

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Part Number:
NTE338F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dBEfficiency = 45

 Intermodulation Distortion @ 20W (PEP): IMD = 30dB Min

 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR




Specifications

CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 4A
Withstand Current (t = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ...80W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...........0.46W/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...65° to +150°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .....2.2°C/W


Description

The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz.


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