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NTE3081

SpecificationsTotal DeviceSurge Isolation Voltage (Input to Output), VISOPeak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6000VRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4242VSteadyStat...

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SeekIC No. : 004436168 Detail

NTE3081: SpecificationsTotal DeviceSurge Isolation Voltage (Input to Output), VISOPeak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6000VRMS . . . . . . . ...

NTE3081 Data Sheet

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Part Number:
NTE3081
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/8

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Product Details

Description



Specifications

Total Device
Surge Isolation Voltage (Input to Output), VISO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6000V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4242V
SteadyState Isolation Voltage (Input to Output), VISO
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4500V
RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3200V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . .55° to +85°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . .55° to +85°C
Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . .+260°C
Infrared Emitting Diode (Emitter)
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..60mA
Peak (Pulse Width 1µs, PRR 300pps) . . . . . . . . . . . . . . . . . . . . . . . . 3A
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4V
Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.67mW/°C
Phototransistor (Detector)
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100mA
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .30V
EmitterCollector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .6V
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5mW/°C




Description

The NTE3081 consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a low cost plastic package with lead spacing compatible with dualinline packages.


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