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NTE275 (PNP)

Features: *High DC Current Gain: hFE = 3000 Typ @ IC = 2A* Low CollectorEmitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A* CollectorEmitter Sustaining Voltage: VCEO(sus) = 80V Min* Monolithic Construction with BuiltIn BaseEmitter Shunt ResistorsSpecificationsCollectorEmitter Voltage, VCEO . ...

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SeekIC No. : 004436162 Detail

NTE275 (PNP): Features: *High DC Current Gain: hFE = 3000 Typ @ IC = 2A* Low CollectorEmitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A* CollectorEmitter Sustaining Voltage: VCEO(sus) = 80V Min* Monolithic ...

NTE275 (PNP) Data Sheet

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Part Number:
NTE275 (PNP)
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* High DC Current Gain: hFE = 3000 Typ @ IC = 2A
* Low CollectorEmitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A
* CollectorEmitter Sustaining Voltage: VCEO(sus) = 80V Min
* Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors


Specifications

CollectorEmitter Voltage, VCEO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . .80V
CollectorBase Voltage, VCB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .80V
EmitterBase Voltage, VEB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... . . . . . . . .5V
Collector Current, IC
     Continuous  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4A
     Peak  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .. .8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . .80mA
Total Power Dissipation (TC = +25),  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 50W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .. . . .0.286W/
Operating Junction Temperature Range, TJ  . . . . . . . . . . . . . . . . . . . . . . . . ... . . .65 to +200
Storage Temperature Range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 to +200
Thermal Resistance, JunctiontoCase, RthJC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3.5/W


Description

The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, lowfrequency switching and hammer driver applications.




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