NTE346

Features:

CurrentGainBandwidth Productf_T = 500MHz (Min) @ I_C = 50mAdc
Power GainG_pe = 10dB (Min) @ V_CE =12Vdc
1 Watt Minimum Power Output @ f = 175MHz
MultipleEmitter Construction for Excellent HighFrequency Performance


Specifications

CollectorEmitter Voltage, V_CEO .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
CollectorBase Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Collector CurrentContinuous, I_C .... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Base CurrentContinuous. I_B  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  400mA
Total Device Dissipation (TA = +25°C), P_D... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
      Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .........5.71mW/°C

Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....3.5Wa
      Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..........20mW/°C

Storage Temperature Range, T_stg   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....65° to +200°C

 

Description

The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency mul- tiplier, or oscillator applications in military and industrial equipment.  Suitable for use as output driver or predriver stages, in VHF and UHF equipment.