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NTE273 (PNP)

Features: *High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA* CollectorEmitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA* Low CollectorEmitter Saturation Voltage:VCE(sat) = 1.5V @ IC = 1A* Monolithic Construction for High ReliabilitySpecificationsCollectorEmitt...

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NTE273 (PNP): Features: *High DC Current Gain: hFE = 25,000 (Min) @ IC = 200mA = 15,000 (Min) @ IC = 500mA* CollectorEmitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA* Low CollectorEmitter Saturation Voltage...

NTE273 (PNP) Data Sheet

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Part Number:
NTE273 (PNP)
Supply Ability:
5000

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Product Details

Description



Features:

* High DC Current Gain:
   hFE = 25,000 (Min) @ IC = 200mA
          = 15,000 (Min) @ IC = 500mA
* CollectorEmitter Breakdown Voltage:
   V(BR)CES = 40V @ IC = 500mA
* Low CollectorEmitter Saturation Voltage:
   VCE(sat) = 1.5V @ IC = 1A
* Monolithic Construction for High Reliability


Specifications

CollectorEmitter Voltage (Note 2), VCEO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................. . . .  . . . . .40V
CollectorEmitter Voltage, VCES  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. ................. . . . . . . . .40V
CollectorBase Voltage, VCB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................. . . . . . . . .50V
EmitterBase Voltage, VEB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .................. . . . . . . . .12V
Collector Current, IC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .................. . . . . . . . . . .2A
Total Power Dissipation (TA = +25), PD  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................. . . . . . . . . . .1W
   Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................. . . . . . . .8mW/
Total Power Dissipation (TC = +25), PD  . . . . . . . . . . . . . . . . . . . . . . . . . . ... ................. . . . . . . . . . .10W
   Derate above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................. . ... . . . .80mW/
Operating Junction Temperature Range, TJ  . . . . . . . . . . . . . . . . . . . . . . . . . .  ................. . .55 to +150
Storage Temperature Range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ................. . .55 to +150
Thermal Resistance, JunctiontoAmbient, RthJA  . . . . . . . . . . . . . . . . . . . . . . . .................. . . . . .125/W
Thermal Resistance, JunctiontoCase, RthJC  . . . . . . . . . . . . . . . . . . . . . . . .. . . ................. . . . .12.5/W
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor elements
             are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused
             by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output
             transistor.


Description

The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.




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