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SPP04N80C3, SPP06N60C3, SPP06N80C2

Table of contents:
Info of SPP04N80C3
Info of SPP06N60C3
Info of SPP06N80C2

SPP04N80C3, SPP06N60C3, SPP06N80C2 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO220-3-1 D/C:2008+

SPP04N80C3, SPP06N60C3, SPP06N80C2 Datasheet download

Five Points

Part Number: SPP04N80C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: P-TO220-3-1

D/C: 2008+

Description: MOSFET N-CH 800V 6A TO-220AB

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SPP04N80C3 Parameters

Technical/Catalog Information	SPP04N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 100V
Power - Max	63W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP04N80C3 SPP04N80C3 SPP04N80C3IN ND SPP04N80C3INND SPP04N80C3IN

SPP04N80C3 Maximum Ratings

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Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4 2.5	4¹) 2.5¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	12	12	A
Avalanche energy, single pulse I_D=0.8A, V_DD=50V	E_AS	170	170	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=4A, V_DD=50V	E_AR	0.1	0.1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4	4	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	63	38	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 640 V, I_D = 4 A, T_j = 125 °C	dv/dt	50		V/ns

SPP04N80C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

SPP06N60C3 Parameters

Technical/Catalog Information	SPP06N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	750 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 25V
Power - Max	74W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP06N60C3 SPP06N60C3 SPP06N60C3IN ND SPP06N60C3INND SPP06N60C3IN

SPP06N80C2 Parameters

Technical/Catalog Information	SPP06N80C2
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	900 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	785pF @ 25V
Power - Max	83W
Packaging	Tube
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Request Inventory Verification
RoHS Status	Request Inventory Verification
Other Names	SPP06N80C2 SPP06N80C2 SPP06N80C2IN ND SPP06N80C2INND SPP06N80C2IN

SPP06N80C2 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	I_D	6 3.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	18	A
Avalanche energy, single pulse I_D=1.5A, V_DD=50V	E_AS	230	mJ
Avalanche energy, repetitive t_AR limited by T_jmax1) I_D=6A, V_DD=50V	E_AR	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I^_AR	6	A
Reverse diode dv/dt I_S=6A, V_DS < V_DD, di/dt=100A/µs, T_jmax=150°C	dv/dt	6	V/ns
Gate source voltage	V_GS	±20	V
Power dissipation TC = 25 °C	P_tot	83	W
Operating and storage temperature	T_j, T_stg	-55... +150	°C

SPP06N80C2 Features

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Ultra low effective capacitances
· Improved noise immunity

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