MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:TO
SPP06N80C3, SPP07N60C2, SPP07N60C3 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: TO
Description: MOSFET N-CH 650V 7.3A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP06N80C3
File Size: 260253 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP07N60C2
File Size: 163668 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP07N60C3
File Size: 383177 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP06N80C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 785pF @ 100V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP06N80C3 SPP06N80C3 SPP06N80C3IN ND SPP06N80C3INND SPP06N80C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 6 3.8 |
61) 3.81) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 18 | 18 | A |
| Avalanche energy, single pulse ID=1.2A, VDD=50V |
EAS | 230 | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=6A, VDD=50V |
EAR | 0.2 | 0.2 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 6 | 6 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 83 | 39 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 640 V, ID = 6 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
| Parameter | Symbol | Value | Unit | |
| SPP_B | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
7.31) 4.61) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 14.6 | 14.6 | A |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 230 | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD=50V |
EAR | 0.5 | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.3 | 7.3 | A |
| Reverse diode dv/dt IS = 7.3 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 83 | 32 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Technical/Catalog Information | SPP07N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP07N60C3 SPP07N60C3 SPP07N60C3IN ND SPP07N60C3INND SPP07N60C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP_B_I | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
7.31) 4.61) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 21.9 | 21.9 | A |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 230 | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD=50V |
EAR | 0.5 | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.3 | 7.3 | A |
| Gate source voltage static | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 83 | 32 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
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