MOSFET N-CH 650V 11A TO-220
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Series: | CoolMOS™ | Manufacturer: | Infineon Technologies | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 650V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 11A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 440 mOhm @ 7A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 5V @ 500µA | Gate Charge (Qg) @ Vgs: | 64nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1200pF @ 25V | ||
Power - Max: | 125W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | PG-TO220-3 |
· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· High peak current capability
· Intrinsic fast-recovery body diode
· Extreme low reverse recovery charge
Parameter |
Symbol |
Value |
Unit |
Continuous drain current TC =25 °C TC =100 °C |
ID |
11 7 |
A |
Pulsed drain current, tp limited by Tjmax |
ID puls |
28 | |
Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS |
340 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax1) ID=11A, VDD=50V |
EAR |
0.6 | |
Avalanche current, repetitive tAR limited by Tjmax |
IAR |
11 |
A |
Reverse diode dv/dt IS=11A, VDS=480V, Tj=125°C |
dv/dt |
40 |
V/ns |
Gate source voltage static |
VGS |
±20 |
V |
Gate source voltage AC (f >1Hz) |
VGS |
±30 | |
Power dissipation, Tc=25°C |
Ptot |
125 |
W |
Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
Technical/Catalog Information | SPP11N60CFD |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Rds On (Max) @ Id, Vgs | 440 mOhm @ 7A, 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 64nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPP11N60CFD SPP11N60CFD SPP11N60CFDIN ND SPP11N60CFDINND SPP11N60CFDIN |