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SPP06N80C3X, SPP07N60, SPP07N60S5

Table of contents:
Info of SPP06N80C3X
Info of SPP07N60
Info of SPP07N60S5

SPP06N80C3X, SPP07N60, SPP07N60S5 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO220 D/C:09+

SPP06N80C3X, SPP07N60, SPP07N60S5 Datasheet download

Five Points

Part Number: SPP07N60S5

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: TO220

D/C: 09+

Description: MOSFET N-CH 650V 7.3A TO-220AB

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SPP07N60S5 Parameters

Technical/Catalog Information	SPP07N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	970pF @ 25V
Power - Max	83W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP07N60S5 SPP07N60S5 SPP07N60S5IN ND SPP07N60S5INND SPP07N60S5IN

SPP07N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	7.3 4.6	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	14.6	A
Avalanche energy, single pulse I_D=-A, V_DD=50V	E_AS	230	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=7.3A, V_DD=50V	E_AR	0.5	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	7.3	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	83	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 7.3 A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPP07N60S5 Features

• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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