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SPP04N50C3, SPP04N50C5, SPP04N60C2

Table of contents:
Info of SPP04N50C3
Info of SPP04N50C5
Info of SPP04N60C2

SPP04N50C3, SPP04N50C5, SPP04N60C2 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:2008+

SPP04N50C3, SPP04N50C5, SPP04N60C2 Datasheet download

Five Points

Part Number: SPP04N50C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: INF/SIE

D/C: 2008+

Description: MOSFET N-CH 560V 4.5A TO-220AB

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SPP04N50C3 Parameters

Technical/Catalog Information	SPP04N50C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 25V
Power - Max	50W
Packaging	Tube
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP04N50C3 SPP04N50C3 SPP04N50C3IN ND SPP04N50C3INND SPP04N50C3IN

SPP04N50C3 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_B	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	4.5¹) 2.8¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	13.5	13.5	A
Avalanche energy, single pulse I_D=3.4A, V_DD=50V	E_AS	130	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=4.5A, V_DD=50V	E_AR	0.4	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	4.5	A
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	50	31	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C
Drain Source voltage slope V_DS = 400 V, I_D = 4.5 A, T_j = 125 °C	dv/dt	50		V/ns

SPP04N50C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

SPP04N60C2 Maximum Ratings

Parameter	Symbol	Value		Unit
Parameter	Symbol	SPP_B	SPA	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	4.5¹) 2.8¹)	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	9	9	A
Avalanche energy, single pulse I_D=3.6A, V_DD=50V	E_AS	130	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax²) I_D=4.5A, V_DD=50V	E_AR	0.4	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	4.5	A
Reverse diode dv/dt I_S = 4.5 A, V_DS < V_DD, di/dt=100A/s, T_jmax=150°C	dv/dt	6	6	V/ns
Gate source voltage	V_GS	±20	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	±30
Power dissipation, T_C = 25°C	P_tot	50	31	W
Operating and storage temperature	T_j, T_stg	-55...+150		°C

SPP04N60C2 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances

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