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Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25
EAS
810
mJ
Reverse diode dv/dt IS =100 A, VDS =32 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
300
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 210A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25
EAS
810
mJ
Repetitive avalanche energy, limited by Tjmax 2)
EAR
30
Reverse diode dv/dt IS =100 A, VDS =32 , di/dt = 200 A/s, Tjmax = 175 °C
dv/dt
6
kV/s
Gate source voltage
VGS
±20
V
Power dissipation TC = 25 °C
Ptot
300
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 135A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test