MOSFET N-CH 800V 6A TO-220AB
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· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Ultra low effective capacitances
· Improved noise immunity
Parameter |
Symbol |
Value |
Unit |
Continuous drain current TC = 25 °C TC = 100 °C |
ID |
6 3.8 |
A |
Pulsed drain current, tp limited by Tjmax |
ID puls |
18 | |
Avalanche energy, single pulse ID=1.5A, VDD=50V |
EAS |
230 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax1) ID=6A, VDD=50V |
EAR |
0.2 | |
Avalanche current, repetitive tAR limited by Tjmax |
IAR |
6 |
A |
Reverse diode dv/dt IS=6A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C |
dv/dt |
6 |
V/ns |
Gate source voltage |
VGS |
±20 |
V |
Power dissipation TC = 25 °C |
Ptot |
83 |
W |
Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
Technical/Catalog Information | SPP06N80C2 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 6A |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.8A, 10V |
Input Capacitance (Ciss) @ Vds | 785pF @ 25V |
Power - Max | 83W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Request Inventory Verification |
RoHS Status | Request Inventory Verification |
Other Names | SPP06N80C2 SPP06N80C2 SPP06N80C2IN ND SPP06N80C2INND SPP06N80C2IN |