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SPP06N80C2

MOSFET N-CH 800V 6A TO-220AB

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SeekIC No. : 004501291 Detail

SPP06N80C2: MOSFET N-CH 800V 6A TO-220AB

SPP06N80C2 Data Sheet

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Part Number:
SPP06N80C2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· New revolutionary high voltage technology
· Ultra low gate charge
· Periodic avalanche rated
· Extreme dv/dt rated
· Ultra low effective capacitances
· Improved noise immunity




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
6
3.8
A
Pulsed drain current, tp limited by Tjmax
ID puls
18
Avalanche energy, single pulse
ID=1.5A, VDD=50V
EAS
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=6A, VDD=50V
EAR
0.2
Avalanche current, repetitive tAR limited by Tjmax
IAR
6
A
Reverse diode dv/dt
IS=6A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
dv/dt
6
V/ns
Gate source voltage
VGS
±20
V
Power dissipation
TC = 25 °C
Ptot
83
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C



Parameters:

Technical/Catalog InformationSPP06N80C2
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs900 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds 785pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names SPP06N80C2
SPP06N80C2
SPP06N80C2IN ND
SPP06N80C2INND
SPP06N80C2IN



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