MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:INF/SIE D/C:07+
SPP08N80C3, SPP08P06P, SPP100N03S2-03 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: INF/SIE
D/C: 07+
Description: MOSFET N-CH 30V 100A TO-220AB
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PDF/DataSheet Download
Datasheet: SPP08N80C3
File Size: 258740 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP08P06P
File Size: 99283 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPP100N03S2-03
File Size: 426420 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPP08N80C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 5.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 100V |
| Power - Max | 104W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP08N80C3 SPP08N80C3 SPP08N80C3IN ND SPP08N80C3INND SPP08N80C3IN |
| Parameter | Symbol | Value | Unit | |
| SPP | SPA | |||
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 8 5.1 |
81) 5.11) |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 24 | 24 | A |
| Avalanche energy, single pulse ID=1.6A, VDD=50V |
EAS | 340 | 340 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax2) ID=8A, VDD=50V |
EAR | 0.2 | 0.2 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 8 | 8 | A |
| Gate source voltage | VGS | ±20 | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 104 | 40 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
| Drain Source voltage slope VDS = 640 V, ID = 8 A, Tj = 125 °C |
dv/dt | 50 | V/ns | |
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
| Technical/Catalog Information | SPP08P06P |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 6.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
| Power - Max | 42W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPP08P06P SPP08P06P SPP08P06PIN ND SPP08P06PINND SPP08P06PIN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | -8.8 -6.2 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | -35.2 | |
| Avalanche energy, single pulse ID =-8.8 A, VDD = -25 V, RGS = 25 |
EAS | 70 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 4.2 | |
| Reverse diode dv/dt IS = -8.8 A, VDS = -48 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 42 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | SPP100N03S2-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 7020pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP100N03S2 03 SPP100N03S203 SPP100N03S2 03IN ND SPP100N03S203INND SPP100N03S2-03IN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C |
ID | 100 100 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 400 | |
| Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
| Repetitive avalanche energy, limited by Tjmax 2) | EAR | 30 | |
| Reverse diode dv/dt IS =100 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 300 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 135A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
· N-Channel
· Enhancement mode
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
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