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SPP1013

Features: ·P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V·Super high density cell design for extremely low RDS (ON)·Exceptional on-resistance and maximum DC current capability·SOT-523 (SC-89) package designApp...

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SeekIC No. : 004501293 Detail

SPP1013: Features: ·P-Channel -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V·Super high density cell design for extremely low RD...

SPP1013 Data Sheet

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Part Number:
SPP1013
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Features:

·P-Channel
      -20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
      -20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
      -20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
·Super high density cell design for extremely low RDS (ON)
·Exceptional on-resistance and maximum DC current capability
·SOT-523 (SC-89) package design


Application

·Drivers : Relays/Solenoids/Lamps/Hammers
·Power Supply Converter Circuits
·Load/Power Switching Cell Phones, Pagers


Pinout

Connection Diagram


Specifications

Parameter Symbol Typical Unit
Drain-Source Voltage VDSS -20 V
Gate Source Voltage VGSS ±12 V
Continuous Drain Current(TJ=150 ) TA=25 ID -0.45 A
TA=80 -0.35
Pulsed Drain Current IDM
 -1.0 A
Continuous Source Current(Diode Conduction) IS -0.3 A
Power Dissipation TA=25 PD 0.27 W
TA=70 0.16
Operating Junction Temperature
 TJ -55/150
Storage Temperature Range TSTG -55/150



Description

The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.




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