SPP11N80C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)




Pinout






Specifications

Parameter	Symbol	Value		Unit
		SPP	SPA
Continuous drain current TC = 25 °C TC = 100 °C	ID	11 7.1	111) 7.11)	A
Pulsed drain current, tp limited by Tjmax	ID puls	33	33	A
Avalanche energy, single pulse ID=2.2A, VDD=50V	EAS	470	470	mJ
Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V	EAR	0.2	0.2
Avalanche current, repetitive tAR limited by Tjmax	IAR	11	11	A
Gate source voltage	VGS	±20	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30	±30
Power dissipation, TC = 25°C	Ptot	156	41	W
Operating and storage temperature	Tj , Tstg	-55...+150		°C
Drain Source voltage slope VDS = 640 V, ID = 11 A, Tj = 125 °C	dv/dt	50		V/ns

²Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.




Description

The SPP11N80C3 is designed as one kind of cool MOS™ power transistor that has some points of features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).

The absolute maximum ratings of the SPP11N80C3 can be summarized as:(1)Continuous drain current TC = 25 °C: 11 A;(2)Continuous drain current TC = 100 °C: 7.1 A;(3)Pulsed drain current, tp limited by Tjmax: 33 A;(4)Avalanche energy, single pulse: 470 mJ;(5)Avalanche energy, repetitive tAR limited by Tjmax: 0.2 mJ;(6)Avalanche current, repetitive tAR limited by Tjmax: 11 A;(7)Gate source voltage: ±20 V;(8)Gate source voltage AC (f >1Hz): ±30 V;(9)Power dissipation, TC = 25°C: 41 W;(10)Operating and storage temperature: -55 to +150 °C. If you want to know more information such as the electrical characteristics about the SPP11N80C3, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	SPP11N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds	1600pF @ 100V
Power - Max	156W
Packaging	Tube
Gate Charge (Qg) @ Vgs	85nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP11N80C3 SPP11N80C3 SPP11N80C3IN ND SPP11N80C3INND SPP11N80C3IN