IRL1044SPBF, IRL1104L, IRL1104S Selling Leads, Datasheet
MFG:IR Package Cooled:D2-PAK D/C:06+
IRL1044SPBF, IRL1104L, IRL1104S Datasheet download
Part Number: IRL1044SPBF
MFG: IR
Package Cooled: D2-PAK
D/C: 06+
IRL1044SPBF, IRL1104L, IRL1104S
- Table of contents:
Info of IRL1044SPBF
Info of IRL1104L
Info of IRL1104S
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About IRL1004
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Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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About IRL1104L
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Datasheet: IRL1104L
File Size: 197139 KB
Manufacturer:
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About IRL1104S
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Datasheet: IRL1104S
File Size: 197139 KB
Manufacturer:
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IRL1104L General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for lowprofile applications.
IRL1104L Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 104 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 74 | A |
| IDM | Pulsed Drain Current | 416 | A |
| PD @ TA = 25°C | Power Dissipation | 2.4 | W |
| PD @TC = 25°C | Power Dissipation | 167 | W |
| Linear Derating Factor | 1.1 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 340 | mJ |
| IAR | Avalanche Current | 62 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
IRL1104S General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRL1104L) is available for lowprofile applications.
IRL1104S Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 104 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 74 | A |
| IDM | Pulsed Drain Current | 416 | A |
| PD @ TA = 25°C | Power Dissipation | 2.4 | W |
| PD @TC = 25°C | Power Dissipation | 167 | W |
| Linear Derating Factor | 1.1 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 340 | mJ |
| IAR | Avalanche Current | 62 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
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