MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
IRL1404S, IRL1404SPBF, IRL1404Z Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 40V 160A D2PAK
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Datasheet: IRL1404S
File Size: 136988 KB
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for lowprofile applications
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 110 | A |
| IDM | Pulsed Drain Current | 640 | A |
| PD @ TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 520 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
| Technical/Catalog Information | IRL1404SPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 95A, 10V |
| Input Capacitance (Ciss) @ Vds | 6600pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 5V |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1404SPBF IRL1404SPBF |
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low.
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 110 | |
| IDM | Pulsed Drain Current | 640 | |
| PD @ TA = 25 | Power Dissipation | 3.8 | W |
| PD @ TC = 25 | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 520 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6 mm from case) |
The IRL1404Z is a fully integrated VCO (Voltage-Controlled Oscillator) IC designed for IRL1404Z/IRL1404Z/IRL1404Z triple-band application. The IC is ideal for use in the trans- mitter modulation loop by providing extremely small form factor and low phase noise. The IC has two VCOs, one for GSM and a second for DCS/PCS. The IC has two separate buffer amplifiers to drive an external high power amplifier, one for IRL1404Z band and the other one for IRL1404Z/ IRL1404Z bands. The IC also has a differential buffer ampli- fier to drive a mixer for the offset PLL. The resonant circuits of the VCOs are fully integrated in the chip to ease the application of the IC. The high quality factor of the embedded tank circuit achieves very low phase noise characteristics at the VCO output. The only required external components are a couple of supply bypass capacitors and matching components. A control pin for controlling the oscillation frequency is shared by the two VCOs. The IRL1404Z IC is provided in a 20-pin 4x4 LLP (Leadless Leadframe package).
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. The LH1500 is robust, ideal for telecom and ground fault applications. It is a SPST normally open switch (1 Form A) that replaces electromechanical relays in many applications. It is constructed using a GaAIAs LED for actuation control and an integrated monolithic die for the switch output. The die, fabricated in a high-voltage dielectrically isolated technology, is comprised of a photodiode array, switch control circuitry and MOSFET switches. In addition, it employs current-limiting cir- cuitry which meets FCC 68.302 and other regulatory voltage surge requirements when overvoltage protec- tion is provided.
At present there is not too much information about this model.If you are willing to find more about IRL1404Z, please pay attention to our web! We will promptly update the relevant information.
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