IRL1104

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 167W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25° C: 104A
Gate Charge (Qg) @ Vgs: 68nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 3445pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V	104
ID @ TC = 100°C	Continuous Drain Current, VGS @10V	74	A
IDM	Pulsed Drain Current	416
PD @TC = 25°C	Power Dissipation	167	W
	Linear Derating Factor	1.1	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	340	mJ
IAR	Avalanche Current	62	A
EAR	Repetitive Avalanche Energy	17	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1104 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL1104 design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package of IRL1104 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.