IRL1004

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 200W
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 130A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
Gate Charge (Qg) @ Vgs: 100nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5330pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @10V	130
ID @ TC = 100°C	Continuous Drain Current, VGS @10V	92	A
IDM	Pulsed Drain Current	520
PD @TC = 25°C	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	± 16	V
EAS	Single Pulse Avalanche Energy	700	mJ
IAR	Avalanche Current	78	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1004 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL1004  is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.