MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:30034+ D/C:09+
IRL1104SPBF, IRL1104SPBF STOCK 1400 IR - 0.6888, IRL1104STRL Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: 30034+
D/C: 09+
Description: MOSFET N-CH 40V 104A D2PAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IRL1104SPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 104A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
| Input Capacitance (Ciss) @ Vds | 3445pF @ 25V |
| Power - Max | 167W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 68nC @ 4.5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1104SPBF IRL1104SPBF |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined withthe fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1104L) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V | 104 | A |
| ID @ TC=100 | Continuous Drain Current, VGS @ 10V | 74 | A |
| IDM | Pulsed Drain Current | 416 | A |
| PD @ TC=25 | Power Dissipation | 2.4 | W |
| PD @ TA=25 | Power Dissipation | 167 | W |
| Linear Derating Factor | 1.1 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 340 | mJ |
| IAR | Avalanche Current | 62 | A |
| EAR | Repetitive Avalanche Energy | 17 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| Tj | Operating Junction and | -55 to +175 | |
| TSTG | Storage Temperature Range Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) |
| Technical/Catalog Information | IRL1104STRL |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 104A |
| Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
| Input Capacitance (Ciss) @ Vds | 3445pF @ 25V |
| Power - Max | 2.4W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 68nC @ 4.5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRL1104STRL IRL1104STRL |
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