IRL024, IRL1004, IRL1004L Selling Leads, Datasheet
MFG:IR Package Cooled:TO-252 D/C:N/A
IRL024, IRL1004, IRL1004L Datasheet download
Part Number: IRL024
MFG: IR
Package Cooled: TO-252
D/C: N/A
IRL024, IRL1004, IRL1004L
- Table of contents:
Info of IRL024
Info of IRL1004
Info of IRL1004L
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About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRL1004
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRL1004L
PDF/DataSheet Download
Datasheet: IRL1004L
File Size: 125957 KB
Manufacturer:
Download : Click here to Download
IRL1004 General Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
IRL1004 Maximum Ratings
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @10V |
130 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @10V |
92 |
A |
| IDM | Pulsed Drain Current |
520 |
|
| PD @TC = 25°C | Power Dissipation |
200 |
W |
| Linear Derating Factor |
1.3 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS | Single Pulse Avalanche Energy |
700 |
mJ |
| IAR | Avalanche Current |
78 |
A |
| EAR | Repetitive Avalanche Energy |
20 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRL1004L General Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for lowprofile application.
IRL1004L Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 130 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 92 | A |
| IDM | Pulsed Drain Current | 520 | A |
| PD @ TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 700 | mJ |
| IAR | Avalanche Current | 78 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
IRL1004L Features
·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
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