IRL1104SPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Resistance Drain-Source RDS (on) : 12 mOhms
Continuous Drain Current : 104 A


Features:

· Advanced Process Technology
· Surface Mount (IRL1104S)
· Low-profile through-hole (IRL1104L)
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Current, VGS @ 10V	104	A
ID @ TC=100	Continuous Drain Current, VGS @ 10V	74	A
IDM	Pulsed Drain Current	416	A
PD @ TC=25	Power Dissipation	2.4	W
PD @ TA=25	Power Dissipation	167	W
	Linear Derating Factor	1.1	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	340	mJ
IAR	Avalanche Current	62	A
EAR	Repetitive Avalanche Energy	17	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
Tj	Operating Junction and	-55 to +175
TSTG	Storage Temperature Range Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier IRL1104SPbF  utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined withthe fast switching speed and ruggedized device design that HEXFET Power MOSFETs IRL1104SPbF  are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL1104SPbF  is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1104SPbF  provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak IRL1104SPbF  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL1104SPbF ) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRL1104SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	104A
Rds On (Max) @ Id, Vgs	8 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds	3445pF @ 25V
Power - Max	167W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	68nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL1104SPBF IRL1104SPBF