IRL1004SPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 16 V
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 9 mOhms


Features:






Specifications






Description

      IRL1004SPbF is a kind of power MOSFET.Here you can get some information about the features of IRL1004SPbF.First is logic-level gate drive.The second is advanced process technology.Then is ultra low on-resistance.Next is dynamic dv/dt rating.The fifth is 175 operating temperature.The sixth is fast switching.The seventh is fully avalanche rated.The last one is lead-free.
      The following is about the absolute maximum ratings of IRL1004SPbF.The maximum V_GS (gate-source voltage) is ±16 V.The maximum I_D (continuous drain current) is 130 A at T_C=25,V_GS=10 V and 92 A at T_C=100,V_GS=10 V.The maximum I_DM (pulsed drain current) is 520 A.The maximum P_D (power dissipation) is 3.8 W at T_A=25 and 200 W at T_C=25.The maximum dv/dt (peak diode recovery dv/dt) is 5.0 V/ns.The E_AR (repetitive avalanche energy) is 20 mJ.The E_AS (single pulse energy) is 700 mJ.The maximum I_AR (avalanche current) is 78 A.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +175.Then is about the thermal resistance.The maximum R_JA (Junction-to-Ambient) is 40/W.The maximum R_JC (Junction-to-Case) is 0.75/W.
      There are the electrical characteristics of IRL1004SPbF at T_J=25.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is 40 V at V_GS=0 V,I_D=250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is 0.04 V/ at reference to 25 and I_D=1 mA.The minimum V_GS(th) (gate threshold voltage) is 1.0 V at V_DS=V_GS,I_D=250A.The typical g_fs (gate threshold voltage) is 63 S at V_DS=25 V,I_D=78 A.The maximum I_DSS (drain to source leakage current) is 25A at V_DS=40 V,V_GS=0 V and is 250A at V_DS=32 V,V_GS=0 V,T_J=150.The maximum (I_GSS) (gate-to-source forward leakage) is 100 nA at V_GS=16 V and the (I_GSS) (gate-to-source reverse leakage) is -100 nA at V_GS=-16 V.

Parameters:

Technical/Catalog Information	IRL1004SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	130A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 78A, 10V
Input Capacitance (Ciss) @ Vds	5330pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	100nC @ 4.5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL1004SPBF IRL1004SPBF