MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:06+
IRL1404, IRL1404L, IRL1404PBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-220
D/C: 06+
Description: MOSFET N-CH 40V 160A TO-220AB
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Datasheet: IRL1404
File Size: 127861 KB
Manufacturer: IRF [International Rectifier]
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Datasheet: IRL1404L
File Size: 136988 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
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| Technical/Catalog Information | IRL1404 |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 95A, 10V |
| Input Capacitance (Ciss) @ Vds | 6590pF @ 25V |
| Power - Max | 200W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 140nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRL1404 IRL1404 |
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for lowprofile applications
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 110 | A |
| IDM | Pulsed Drain Current | 640 | A |
| PD @ TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 520 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
| Technical/Catalog Information | IRL1404PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 95A, 10V |
| Input Capacitance (Ciss) @ Vds | 6590pF @ 25V |
| Power - Max | 200W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1404PBF IRL1404PBF |
Seventh Generation HEXFET power MOSFETs from InternationalRectifier utilize advanced processing techniques to ieve extremelylow on-resistance per silicon area. This benefit, combined with the fastswitching dnduggedizeddevicedesign that HEXFET powerMOSFETs are well known for, provides the designer with an extremelyefficient and abledevice foruse in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrialapplications at werdissipationlstoapproximately 50 watts. Thelow thermal resistance and low package cost of the TO-220 contribute toits wide acceptance throughout the industry.
|
|
Parameter |
Max. |
Units |
|
ID@TC =25 |
ontinuous Drain Current,VGS@10V |
160 |
A |
|
ID@TC =100 |
ontinuous Drain Current,VGS@10V |
110 | |
|
IDM |
Pulsed Drain Current |
640 | |
|
PD@TC =25 |
CPower Dissipatio |
200 |
W |
|
|
Linear Derating Factor |
1.3 |
W/ |
|
VGS |
Gate-to-Source Voltage |
± 20 |
v |
|
EAS |
Single Pulse Avalanche Energy |
620 |
mJ |
|
IAR |
Avalanche Current |
95 |
A |
|
EAR |
Repetitive Avalanche Energy |
20 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ, |
Operating Junction and |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | |
|
|
Mounting torque, 6-32 or M3 srew |
10 lbf.in (1.1N.m) |
|
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