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IRL1004PBF, IRL1004S, IRL1104

IRL1004PBF, IRL1004S, IRL1104 Selling Leads, Datasheet

MFG:International Rectifier  Category:Discrete Semiconductor Products  Package Cooled:TO220  D/C:08+

IRL1004PBF Picture

IRL1004PBF, IRL1004S, IRL1104 Datasheet download

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Part Number: IRL1004PBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO220

D/C: 08+

Description: MOSFET N-CH 40V 130A TO-220AB

 

 
 
 
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IRL1004PBF Suppliers

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  • IRL1004

  • Vendor: IR Pack: TO D/C: 09+& Qty: 220  Adddate: 2024-12-18
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IRL1004S

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-12-18
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About IRL1004

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Datasheet: IRL1004

File Size: 91524 KB

Manufacturer: IRF [International Rectifier]

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IRL1004S Suppliers

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  • IRL1004S

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-12-18
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)
  • IRL1004

  • Vendor: IR Pack: TO D/C: 09+& Qty: 220  Adddate: 2024-12-18
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IRL1004S

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-12-18
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About IRL1004S

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Datasheet: IRL1004S

File Size: 125957 KB

Manufacturer:

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IRL1104 Suppliers

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  • IRL1004

  • Vendor: IR Pack: TO D/C: 09+& Qty: 220  Adddate: 2024-12-18
  • Inquire Now
  • EK   China
    Contact: Mr.kevin  
    Tel: +86-755-111111111
    Fax:
    (1)
  • IRL1004S

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-12-18
  • Inquire Now
  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About IRL1104

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Datasheet: IRL1104

File Size: 92621 KB

Manufacturer: IRF [International Rectifier]

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IRL1004PBF Parameters

Technical/Catalog InformationIRL1004PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C130A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 78A, 10V
Input Capacitance (Ciss) @ Vds 5330pF @ 25V
Power - Max200W
PackagingBulk
Gate Charge (Qg) @ Vgs100nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL1004PBF
IRL1004PBF

IRL1004S General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL1004L) is available for lowprofile application.

IRL1004S Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92 A
IDM Pulsed Drain Current 520 A
PD @ TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 700 mJ
IAR Avalanche Current 78 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)

IRL1004S Features

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated

IRL1104 General Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL1104 Maximum Ratings

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
104
ID @ TC = 100°C Continuous Drain Current, VGS @10V
74
A
IDM Pulsed Drain Current
416
PD @TC = 25°C Power Dissipation
167
W
Linear Derating Factor
1.1
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
340
mJ
IAR Avalanche Current
62
A
EAR Repetitive Avalanche Energy
17
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

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