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IRL110V, IRL1404LPBF, IRL1404STRL

Table of contents:
Info of IRL110V
Info of IRL1404LPBF
Info of IRL1404STRL

IRL110V, IRL1404LPBF, IRL1404STRL Selling Leads, Datasheet

MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+

IRL110V, IRL1404LPBF, IRL1404STRL Datasheet download

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Part Number: IRL1404LPBF

Category: Discrete Semiconductor Products

MFG: International Rectifier

Package Cooled: TO-220

D/C: 09+

Description: MOSFET N-CH 40V 160A TO-262

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IRL1404LPBF Parameters

Technical/Catalog Information	IRL1404LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	4 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds	6600pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL1404LPBF IRL1404LPBF

IRL1404LPBF General Description

Seventh Generation HEXFET^® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low.

IRL1404LPBF Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25	Continuous Drain Current, VGS @ 10V	160	A
I_D @ T_C = 100	Continuous Drain Current, VGS @ 10V	110
I_DM	Pulsed Drain Current	640
P_D @ T_A = 25	Power Dissipation	3.8	W
P_D @ T_C = 25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	520	mJ
I_AR	Avalanche Current	95	A
E_AR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting T_J= 25, L = 0.35mH R_G = 25, I_AS= 95A. (See Figure 12)
I_SD 95A, di/dt 160A/s, V_DD V_(BR)DSS, T_J 175
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4.

IRL1404LPBF Features

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free

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