MFG:International Rectifier Category:Discrete Semiconductor Products Package Cooled:TO-262 D/C:08+/09+
IRL1404ZL, IRL1404ZS, IRL1404ZSPBF Datasheet download
Category: Discrete Semiconductor Products
MFG: International Rectifier
Package Cooled: TO-262
D/C: 08+/09+
Description: MOSFET N-CH 40V 75A D2PAK
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PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRL1004
File Size: 91524 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
The IRL1404ZL has the following features including Logic Level;Advanced Process Technology;Ultra Low On-Resistance;175°C Operating Temperature;Fast Switching;Repetitive Avalanche Allowed up to Tjmax.
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11);Limited by TJmax, starting TJ = 25°C,L = 0.079mH, RG = 25, IAS = 75A, VGS =10V.Part not recommended for use above this value.;Pulse width 1.0ms; duty cycle 2%.;Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. The LH1500 is robust, ideal for telecom and ground fault applications. It is a SPST normally open switch (1 Form A) that replaces electromechanical relays in many applications. It is constructed using a GaAIAs LED for actuation control and an integrated monolithic die for the switch output. The die, fabricated in a high-voltage dielectrically isolated technology, is comprised of a photodiode array, switch control circuitry and MOSFET switches. In addition, it employs current-limiting cir- cuitry which meets FCC 68.302 and other regulatory voltage surge requirements when overvoltage protec- tion is provided.
At present there is not too much information about this model.If you are willing to find more about IRL1404ZL, please pay attention to our web! We will promptly update the relevant information.
The IRL1404ZS has the following features including Logic Level;Advanced Process Technology;Ultra Low On-Resistance;175°C Operating Temperature;Fast Switching;Repetitive Avalanche Allowed up to Tjmax.
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11);Limited by TJmax, starting TJ = 25°C,L = 0.079mH, RG = 25, IAS = 75A, VGS =10V.Part not recommended for use above this value.;Pulse width 1.0ms; duty cycle 2%.;Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. The LH1500 is robust, ideal for telecom and ground fault applications. It is a SPST normally open switch (1 Form A) that replaces electromechanical relays in many applications. It is constructed using a GaAIAs LED for actuation control and an integrated monolithic die for the switch output. The die, fabricated in a high-voltage dielectrically isolated technology, is comprised of a photodiode array, switch control circuitry and MOSFET switches. In addition, it employs current-limiting cir- cuitry which meets FCC 68.302 and other regulatory voltage surge requirements when overvoltage protec- tion is provided.
At present there is not too much information about this model.If you are willing to find more about IRL1404ZS, please pay attention to our web! We will promptly update the relevant information.
| Technical/Catalog Information | IRL1404ZSPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 5080pF @ 25V |
| Power - Max | 200W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL1404ZSPBF IRL1404ZSPBF |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
180 |
A |
| ID @ TC =100 |
Continuous Drain Current, VGS @ 10V |
130 | |
| ID @ TC = 25 | Continuous Drain Current,VGS @ 10V (Package Limited) |
75 | |
| IDM | Pulsed Drain Current |
790 | |
| PD @TC= 25 | Power Dissipation |
200 |
W |
| Linear Derating Factor |
1.3 |
W/ | |
| VGS | Gate-to-Source Voltage |
±16 |
V |
| EAS (Thermally limited) | Single Pulse Avalanche Energy |
190 |
|
| EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
490 |
mJ |
| IAR | Avalanche Current� |
See Fig.12a, 12b, 15, 16 |
A |
| EAR | Repetitive Avalanche Energy |
mJ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Reflow Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
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