BLV99/SL, BLV99SL, BLW11 Selling Leads, Datasheet
MFG:PHI D/C:N/A
BLV99/SL, BLV99SL, BLW11
- Table of contents:
Info of BLV99/SL
Info of BLV99SL
Info of BLW11
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About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV99SL
PDF/DataSheet Download
Datasheet: BLV99SL
File Size: 72249 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW29
PDF/DataSheet Download
Datasheet: BLW29
File Size: 70830 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV99/SL General Description
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base.
BLV99/SL Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 50 | V | |
| VCES | collector-emitter voltage | open base | 27 | V | |
| VEBO | emitter-base voltage | open collector | 3.5 | V | |
| IC | collector current | DC or average value | 200 | A | |
| ICM | collector current | peak value f > 1 MHz | 600 | A | |
| Ptot | total power dissipation | f > 1 MHz;Ts = 103 °C (note 1) |
6 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV99/SL Features
* Emitter-ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Gold metallization ensures excellent reliability.
BLV99/SL Connection Diagram
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