BLV103, BLV11, BLV12 Selling Leads, Datasheet
MFG:PHLISPH Package Cooled:n/a D/C:04+
BLV103, BLV11, BLV12 Datasheet download
Part Number: BLV103
MFG: PHLISPH
Package Cooled: n/a
D/C: 04+
BLV103, BLV11, BLV12
- Table of contents:
Info of BLV103
Info of BLV11
Info of BLV12
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About BLV103
PDF/DataSheet Download
Datasheet: BLV103
File Size: 92135 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV11
PDF/DataSheet Download
Datasheet: BLV11
File Size: 83857 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV12
PDF/DataSheet Download
Datasheet: BLV12
File Size: 73800 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV103 General Description
NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter,class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base.
BLV103 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 550 | V | |
| VCES | collector-emitter voltage | open base | 30 | V | |
| VEBO | emitter-base voltage | open collector | 4 | V | |
| IC | peak collector current | DC or average value | 1.25 | A | |
| Ptot | total power dissipation | Tmb =25 | 17 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV103 Features
* Internal matching for an optimum wideband capability and high gain
* Emitter-ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability.
* Emitter-ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV103 Connection Diagram
BLV11 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV11 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 18v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 3 A | ||
| (peak value); f > 1 MHz | ICM | max. | 8 A | ||
| Total power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 36 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV11 Connection Diagram
BLV12 General Description
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for common emitter,class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange.
BLV12 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 36 | V | |
| VCES | collector-emitter voltage | open base | 16 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC,IC(AV) | collector current | DC or average value | 6 | A | |
| ICM | collector current | peak value f > 1 MHz | 18 | A | |
| Ptot | total power dissipation | RF operation;f > 1 MHz; Tmb =25 °C |
100 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV12 Features
* Emitter-ballasting resistors for an optimum temperature profile
* Excellent reliability
* Withstands full load mismatch.
* Excellent reliability
* Withstands full load mismatch.
BLV12 Connection Diagram
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