BLV193, BLV194, BLV2 Selling Leads, Datasheet
MFG:PH Package Cooled:PHL D/C:93+
BLV193, BLV194, BLV2
- Table of contents:
Info of BLV193
Info of BLV194
Info of BLV2
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About BLV193
PDF/DataSheet Download
Datasheet: BLV193
File Size: 111243 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV194
PDF/DataSheet Download
Datasheet: BLV194
File Size: 93506 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV20
PDF/DataSheet Download
Datasheet: BLV20
File Size: 83772 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV193 General Description
NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band.
The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.
The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.
BLV193 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 36 | V | |
| VCES | collector-emitter voltage | open base | 16 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC | peak collector current | DC or average value | 3.5 | A | |
| Ptot | total power dissipation | up to Tmb =25 °C | 44 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV193 Features
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Gold metallization ensures excellent reliability.
BLV193 Connection Diagram
BLV194 General Description
NPN silicon planar epitaxial transistor intended for common emitter class-AB operation in the 900 MHz communications band.
The transistor has a SOT171 flange envelope with a ceramic cap.
All leads are isolated from the mounting base.
BLV194 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCEO | collector-emitter voltage | open base | - | 16 | V |
| VCES | collector-emitter voltage | base short-circuited | - | 32 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current (DC) | - | 3 | A | |
| IC(AV) | average collector current | - | 3 | A | |
| Ptot | total power dissipation | Tmb =25 °C | - | 46 | W |
| Tstg | storage temperature | -65 | 150 | ||
| Tj | junction temperature | - | 200 |
BLV194 Features
• Emitter-ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability.
• Gold metallization ensures excellent reliability.
BLV194 Typical Application
These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from uch improper use or sale.
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