BLV20, BLV2042, BLV2043 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-59 D/C:08+/09+
BLV20, BLV2042, BLV2043 Datasheet download
Part Number: BLV20
MFG: PHILIPS
Package Cooled: TO-59
D/C: 08+/09+
BLV20, BLV2042, BLV2043
- Table of contents:
Info of BLV20
Info of BLV2042
Info of BLV2043
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About BLV20
PDF/DataSheet Download
Datasheet: BLV20
File Size: 83772 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV2042
PDF/DataSheet Download
Datasheet: BLV2042
File Size: 112042 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV20 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV20 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 65v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 36v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 0.9 A | ||
| (peak value); f > 1 MHz | ICM | max. | 2.5 A | ||
| Total power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 20 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV20 Connection Diagram
BLV2042 General Description
NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base.
BLV2042 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 60 | V | |
| VCES | collector-emitter voltage | open base | 28 | V | |
| VEBO | emitter-base voltage | open collector | 4 | V | |
| IC | collector current(DC) | 1.2 | A | ||
| IC(AV) | collector current average | 1.2 | A | ||
| Ptot | total power dissipation | Tmb =25 °C; note 1 | 14.6 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV2042 Features
* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.
BLV2042 Typical Application
* Common emitter class-AB operation in base stations in the 1800 to 1990 MHz frequency range.
BLV2042 Connection Diagram
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