BLW32

Configuration :
Maximum DC Collector Current :
Emitter- Base Voltage VEBO : 4 V
Packaging : Tray
Collector- Emitter Voltage VCEO Max : 30 V
Maximum Operating Frequency : 860 MHz
Continuous Collector Current : 1 A
Power Dissipation : 10.8 W
Package / Case : SOT-122A


Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	50
Collector-emitter voltage (open base)	Vceo	max.	30v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC	max.	650m A
(peak value); f > 1 MHz	ICM	max.	1000m A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	Ptot (r.f.)	max.	10.8 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW32 primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design of BLW32 and the application of gold sandwich metallization realizes excellent reliability properties.

The BLW32 has a 1/4" capstan envelope with ceramic cap.