BLW33

Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	50
Collector-emitter voltage (open base)	Vceo	max.	30v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC	max.	1.25 A
(peak value); f > 1 MHz	ICM	max.	1.9A
Total power dissipation
up to Tmb =25 °C	Ptot (r.f.)	max.	19.3 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW33 primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design of BLW33 and the application of gold sandwich metallization
realizes excellent reliability properties.

The BLW33 has a 1/4" capstan envelope with ceramic cap.