BLW29, BLW30, BLW31 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:PHL D/C:93+
BLW29, BLW30, BLW31
- Table of contents:
Info of BLW29
Info of BLW30
Info of BLW31
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About BLW29
PDF/DataSheet Download
Datasheet: BLW29
File Size: 70830 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BLW30
PDF/DataSheet Download
Datasheet: BLW30
File Size: 73841 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW31
PDF/DataSheet Download
Datasheet: BLW31
File Size: 28255 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
BLW29 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage,the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW29 Maximum Ratings
| Collector-base voltage (open emitter)(peak value); VBE =0 open base |
VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 18v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 2.75 A | ||
| (peak value); f > 1 MHz | ICM | max. | 8 A | ||
| Total power dissipation | |||||
|
at Tmb = 94 °C; f > 1 MHz |
Ptot (r.f.) | max. | 53 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW29 Connection Diagram
BLW30 General Description
NPN silicon planar epitaxial transistor encapsulated in a 4-lead 3/8 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud.
BLW30 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 36 | V | |
| VCES | collector-emitter voltage | open base | 16 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC,IC(AV) | collector current | DC or average value | 6 | A | |
| ICM | collector current | peak value f > 1 MHz | 18 | A | |
| Ptot | total power dissipation | RF operation;f > 1 MHz; Tmb =25 °C |
100 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLW30 Features
* Emitter-ballasting resistors for an optimum temperature profile
* Excellent reliability
* Withstands full load mismatch.
* Excellent reliability
* Withstands full load mismatch.
BLW30 Connection Diagram
BLW31 General Description
The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability
BLW31 Maximum Ratings
| IC | 4.0 A | ||||
| VCBO | 36 V | ||||
| VCEO | 18 V | ||||
| VEBO | 4.0 V | ||||
| PDISS | 40 W @ TC = 25 | ||||
| TJ | -65 to +200 | ||||
| TSTG | -65 to +150 | ||||
| èJC | 4.4 /W | ||||
BLW31 Features
* Common Emitter-Class-C
* PG = 10 dB at 30 W/150 MHz
* Omnigold(TM) Metalization System
* PG = 10 dB at 30 W/150 MHz
* Omnigold(TM) Metalization System
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