BLW82F, BLW83, BLW84 Selling Leads, Datasheet
MFG:593 Package Cooled:PHL D/C:93+
BLW82F, BLW83, BLW84
- Table of contents:
Info of BLW82F
Info of BLW83
Info of BLW84
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About BLW29
PDF/DataSheet Download
Datasheet: BLW29
File Size: 70830 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW83
PDF/DataSheet Download
Datasheet: BLW83
File Size: 81335 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW29
PDF/DataSheet Download
Datasheet: BLW29
File Size: 70830 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLW83 General Description
N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and v.h.f. bands, with a nominal supply voltage of 28 V. The transistor is specified for s.s.b. applications as linear amplifier in class-A and AB. The device is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW83 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCESM | max. | 65v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 36v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current (average) | IC(AV) | max. | 3 A | ||
| Collector current (peak value); f > 1 MHz | ICM | max. | 9A | ||
| D.C. and r.f. (f > 1 MHz) power | |||||
| dissipation; Tmb = 25 °C | Ptot ,Prf | max. | 76 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW83 Connection Diagram
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