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BLW75, BLW80, BLW81

Table of contents:
Info of BLW75
Info of BLW80
Info of BLW81

BLW75, BLW80, BLW81 Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:380 4L D/C:09+

BLW75, BLW80, BLW81 Datasheet download

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Part Number: BLW75

MFG: PHILIPS

Package Cooled: 380 4L

D/C: 09+

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BLW75 General Description

The ASI BLW75 is Designed for 25V Large-Signal Amplifier Applications, TV Transposers, and Transmitters Operating in Band lll.

BLW75 Maximum Ratings

IC	4.0 A
VCBO	32 V
VCEO	60 V

PDISS	60 W @ TC = 25
TJ	-65 to +200
TSTG	-65 to +150
èJC	1.9 /W

BLW80 General Description

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.

The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.

The transistor is housed in a 1⁄4"capstan envelope with a ceramic cap.

BLW80 Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from uch improper use or sale.

BLW81 General Description

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.

The transistor is housed in a 1/4" capstan envelope with a ceramic cap.

BLW81 Maximum Ratings

Collector-base voltage (open emitter)(peak value); VBE =0 open base	V_CBSM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	17v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC	max.	2.5 A
(peak value); f > 1 MHz	ICM	max.	7.5 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	Ptot	max.	40 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

BLW81 Connection Diagram

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