BLW29

Pinout




Specifications

Collector-base voltage (open emitter)(peak value); VBE =0 open base	VCBSM	max.	36v
Collector-emitter voltage (open base)	Vceo	max.	18v
Emitter-base voltage (open collector)	Vebo	max.	4v
Collector current
d.c. or average	IC(AV)	max.	2.75 A
(peak value); f > 1 MHz	ICM	max.	8 A
Total power dissipation
at Tmb = 94 °C; f > 1 MHz	Ptot (r.f.)	max.	53 W
Storage temperature	Tstg	-65 to , 150 °C
Operating junction temperature	Tj	max.	200 °C

Description

N-P-N silicon planar epitaxial transistor BLW29 intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and  excellent power handling capability, the transistor BLW29 is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage,the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

BLW29 has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.