BLW32, BLW32F, BLW33 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-55 D/C:N/A
BLW32, BLW32F, BLW33 Datasheet download
Part Number: BLW32
MFG: PHILIPS
Package Cooled: TO-55
D/C: N/A
BLW32, BLW32F, BLW33
- Table of contents:
Info of BLW32
Info of BLW32F
Info of BLW33
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About BLW32
PDF/DataSheet Download
Datasheet: BLW32
File Size: 83136 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW29
PDF/DataSheet Download
Datasheet: BLW29
File Size: 70830 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW33
PDF/DataSheet Download
Datasheet: BLW33
File Size: 82989 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLW32 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties.
The transistor has a 1/4" capstan envelope with ceramic cap.
The transistor has a 1/4" capstan envelope with ceramic cap.
BLW32 Maximum Ratings
| Collector-base voltage (open emitter)(peak value); VBE =0 open base |
VCBSM | max. | 50 | ||
| Collector-emitter voltage (open base) | Vceo | max. | 30v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 650m A | ||
| (peak value); f > 1 MHz | ICM | max. | 1000m A | ||
| Total power dissipation | |||||
|
at Tmb = 94 °C; f > 1 MHz |
Ptot (r.f.) | max. | 10.8 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW32 Connection Diagram
BLW33 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization
realizes excellent reliability properties.
The transistor has a 1/4" capstan envelope with ceramic cap.
realizes excellent reliability properties.
The transistor has a 1/4" capstan envelope with ceramic cap.
BLW33 Maximum Ratings
| Collector-base voltage (open emitter)(peak value); VBE =0 open base |
VCBSM | max. | 50 | ||
| Collector-emitter voltage (open base) | Vceo | max. | 30v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 1.25 A | ||
| (peak value); f > 1 MHz | ICM | max. | 1.9A | ||
| Total power dissipation | |||||
|
up to Tmb =25 °C |
Ptot (r.f.) | max. | 19.3 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW33 Connection Diagram
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