BLW50, BLW50F, BLW60 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-59 D/C:TO-59
BLW50, BLW50F, BLW60 Datasheet download
Part Number: BLW50
MFG: PHILIPS
Package Cooled: TO-59
D/C: TO-59
BLW50, BLW50F, BLW60
- Table of contents:
Info of BLW50
Info of BLW50F
Info of BLW60
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About BLW50F
PDF/DataSheet Download
Datasheet: BLW50F
File Size: 77393 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW50F
PDF/DataSheet Download
Datasheet: BLW50F
File Size: 77393 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW60
PDF/DataSheet Download
Datasheet: BLW60
File Size: 88323 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLW50F General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW50F Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCESM | max. | 110v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 55v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current (average) | IC(AV) | max. | 2.5 A | ||
| Collector current (peak value); f > 1 MHz | ICM | max. | 7.5 A | ||
| D.C. and r.f. (f > 1 MHz) power | |||||
| dissipation; Tmb = 25 °C | Ptot ,Prf | max. | 94 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW50F Connection Diagram
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