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·Basestations of the V582ME20-LF·Portable Radios·Mobile Communications
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Mfg:Z-COMM Pack:2006 D/C:MINI-16 Vendor:Other Category:Other
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Vendor:Littelfuse Inc Category:Circuit Protection
VARISTOR 575V 220J 20MM RADL LAThe LA Series of transient voltage surge suppressors are radial-lead varistors (MOVs) that are designed to be operated continuously across AC power lines. These UL recognized varistors require very little mounting space,...
Vendor:Littelfuse Inc Category:Circuit Protection
VARISTR 575V 120J 14MM RADIAL LAThe LA Series of transient voltage surge suppressors are radial-lead varistors (MOVs) that are designed to be operated continuously across AC power lines. These UL recognized varistors require very little mounting space,...
Vendor:Littelfuse Inc Category:Circuit Protection
VARISTOR 575V 65J 10MM RADIAL LAThe LA Series of transient voltage surge suppressors are radial-lead varistors (MOVs) that are designed to be operated continuously across AC power lines. These UL recognized varistors require very little mounting space,...
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The V55C2256164VB is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V55C2256164VB achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bits ...
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The V54C365804VD(L) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 8. The V54C365804VD(L) achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bi...
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The V54C365804VC is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 8. The V54C365804VC achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bits and...
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The V54C365404VD(L) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 4. The V54C365404VD(L) achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bi...
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The V54C365324V is a 67,108, 864 bits synchronous high data rate DRAM organized as 4 x 524,288 words by 32 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically ...
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The V54C365164VD(L) is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VD(L) achieves high speed data transfer rates up to 225 MHz by employing a chip architecture that prefetches multiple b...
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The V54C365164VC is a four bank Synchronous DRAM organized as 4 banks x 1Mbit x 16. The V54C365164VC achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits an...
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The V54C333322V is a 33,554,432 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 32 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically a...
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The V54C3256164VBUC/T is a low power four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V54C3256164VBUC/T achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetc...
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The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up ...
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The V54C3180 is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employin...
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The V54C316162VC is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically ...
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The V54C316162V is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically a...
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The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 16...
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The V54C3128804VAT is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 8. The V54C3128804VAT achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bits...
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The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 16...
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The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 16...
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The V53C832L is a high speed 262,144 x 32 bit high performance CMOS dynamic random access memory. The V53C832L offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth wit...
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The V53C8258H is a high speed 262,144 x 8 bit CMOS dynamic random access memory. The V53C8258H offers a combination of features: Page Mode with Extended Data Output for high data bandwidth, and Low CMOS standby current.A...
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The V53C8256H is a high speed 262,144 x 8 bit CMOS dynamic random access memory. The V53C8256H offers a combination of features: Fast Page Mode for high data bandwidth, fast usable speed, CMOS standby current.All inputs ...
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The V53C818H is a 524,288 x 16 bit highperformance CMOS dynamic random access memory. It offers Page mode operation with Extended Data Output. An address, CAS and RAS input capacitances are reduced to one half when the 2...
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The V53C816H is a 524,288 x 16 bit high-performance CMOS dynamic random access memory. The V53C816H offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one half when the ...
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The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current.All inputs a...
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The V53C8128H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8128H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current.All inputs a...
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The V53C8126H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8126H offers a combination of features: Fast Page Mode for high data bandwidth, fast usable speed, CMOS standby current.All inputs ...
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The V53C8125H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8125H offers a combination of features: Fast Page Mode for high data bandwidth, fast usable speed, CMOS standby current.All inputs ...
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The V53C808H35 is one of the V53C808H series. The V53C808H35 is a ultra high speed 1,048,576*8 bit CMOS dynamic random access memory.The V53C808H35 offers a combination of features:Page mode with extended data ouptut for...
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The V53C808H is a ultra high speed 1,048,576 x 8 bit CMOS dynamic random access memory. The V53C808H offers a combination of features: Page Mode with Extended Data Output for high data bandwidth, and Low CMOS standby cur...
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The V53C806HK45 is one of the V53C806H series.The V53C806HK45 is a is a ultra high speed 1,048,576 x8 bit CMOS dynamic random access memory. The V53C806H offers a combination of features: Fast Page Mode for high data ba...
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The V53C806H is a ultra high speed 1,048,576 x 8 bit CMOS dynamic random access memory. The V53C806H offers a combination of features: Fast Page Mode for high data bandwidth, and Low CMOS standby current.All inputs and o...
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The V53C518165A60 is a 1048576 x 16 bit highperformance CMOS dynamic random access memory. The V53C518165A offers Page mode operation with Extended Data Output. The V53C518165A has symmetric address, 10-bit row and 10-bi...
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The V53C518165A is a 1048576 x 16 bit highperformance CMOS dynamic random access memory. The V53C518165A offers Page mode operation with Extended Data Output. Th V53C518165A has symmetric address, 10-bit row and 10-bit c...
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The V53C517405A is a 4,194,304 x 4 bit highperformance CMOS dynamic random access memory. The V53C517405A offers Page mode operation with Extended Data Output. The V53C517405A has a symmetric address, 11-bit row and 11-b...
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The V53C516405A is a 4,194,304 x 4 bit highperformance CMOS dynamic random access memory. The V53C516405A offers Page mode operation with Extended Data Output. The V53C516405A has a symmetric address, 12-bit row and 10-b...
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The V53C516400A is a 4,194,304 x 4 bit highperformance CMOS dynamic random access memory. The V53C516400A offers Page mode operation. he V53C516400A has asymmetric address,12-bit row and 10-bit column.All inputs are TTL ...
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The V53C318165A is a 1048576 x 16 bit highperformance CMOS dynamic random access memory. The V53C318165A offers Page mode operation with Extended Data Output. The V53C318165A has an symmetric address, 10-bit row and 10-b...
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The V53C317405A is a 4,194,304 x 4 bit highperformance CMOS dynamic random access memory. The V53C317405A offers Page mode operation with Extended Data Output. The V53C317405A has a symmetric address, 11-bit row and 11-b...
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The V53C316405A is a 4,194,304 x 4 bit highperformance CMOS dynamic random access memory. The V53C316405A offers Page mode operation with Extended Data Output. The V53C316405A has asymmetric address, 12-bit row and 10-bi...
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The V53C1664H is a 65,536 x 16 bit high performance CMOS dynamic random access memory. The V53C1664H offers Fast Page mode with dual CAS inputs. The V53C1664H has symmetric address, 8-bit row and 8-bit column.All inputs ...
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The V53C16258SHT40 is a high speed 262,144*16 bit high performance CMOS dynamic random access memory.The V53C16258SHT40 offers a combination of unique features including:EDO page mode operation for higher sustained band ...
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The V53C16258SH is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258SH offers acombination of unique features including: EDO Page Mode operation for higher sustained bandwidt...
Mfg:MOSELVIT Vendor:Other Category:Other
The V53C16258L is a 262,144 x 16 bit highperformance CMOS dynamic random access memory. The V53C16258L offers Page mode withExtended Data Output. An address, CAS and RAS input capacitances are reduced to one quarter when...
Mfg:MOSELVIT Vendor:Other Category:Other
The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth...
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