Features: 256K x 8-bit organizationEDO Page Mode for a sustained data rateof 71 MHzRAS access time: 35, 40, 45, 50 nsLow power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh capabilityRefresh Interval: 512 cycles/8 msAvailable in 24 pin 300 mil Plastic DIP,26/24 pin 300 mil ...
V53C8258H: Features: 256K x 8-bit organizationEDO Page Mode for a sustained data rateof 71 MHzRAS access time: 35, 40, 45, 50 nsLow power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh c...
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PinoutDescriptionThe V53C104AK-80 belongs to the V53C104A series.V53C104AK-80 is a high speed 262,...
DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C8258H is a high speed 262,144 x 8 bit CMOS dynamic random access memory. The V53C8258H offers a combination of features: Page Mode with Extended Data Output for high data bandwidth, and Low CMOS standby current.
All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Page Mode with Extended Data Output operation allows random access of up to 512 (x8) bits within a row with cycle times as fast as 14 ns. Because of static circuitry, the CAS clock is not in the critical timing path. The flow-through column address latches allow address pipelining while relaxing many critical system timing requirements. The V53C8258H is ideally suited for graphics, digital signal processing and high-performance computing systems.