V53C104DK80

The V53C104DK80 belongs to the V53C104D series. V53C104DK80 is a high speed 262,144*4 bit CMOS dynamic radom access memory. It is available in 20 lead plastic DIP package. V53C104DK80 has some features as follows. (1) low power dissipation; (2) low CMOS standby current; (3) common I/O capability; (4) refresh interval; (5) fast page mode for a sustainable data rate greater than 25 Hz.

The absolute maximum ratings of V53C104DK80 can be summorized as follows: (1): ambient temperature under bias is from -10 to 80 ; (2): storage temperature is from -55 to 125 ; (3): voltage relative to VSS and voltage on VDD relative to VSS are both from -1.0 V to 7.0 V; (4): data output current is 50 mA; (5): power dissipation is 1.0 W. Then is about its DC characteristics at TA is from 0 to 70 and VDD is 5 V±10 %. (1): input leakage current is from -10 A to 10 A; (2): the maximum VDD supply current is 110 mA at access time is 45 ns and is 100 mA at access time is 50 ns; (3): input low voltage is from -1 V to 0.8 V; (4): the maximum output low voltage is 0.4 V at IOL is 4.2 mA; (5): the minimum output high voltage is 2.4 V at IOH is -5 mA.