V53C104B

DescriptionThe vitelic V53C104B is a high speed 262,144*4 bit CMOS dynamic random access memory.Fabricated with vitelic's VICMOS IV technology,the V53C104B offers a combination of features:fast page mode for high data bandwidth,fast usable speed,CMOS standby current and,on request,extended refresh...

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SeekIC No. : 004539914 Detail

V53C104B: DescriptionThe vitelic V53C104B is a high speed 262,144*4 bit CMOS dynamic random access memory.Fabricated with vitelic's VICMOS IV technology,the V53C104B offers a combination of features:fast page...

floor Price/Ceiling Price

Part Number:
V53C104B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Description

The vitelic V53C104B is a high speed 262,144*4 bit CMOS dynamic random access memory.Fabricated with vitelic's VICMOS IV technology,the V53C104B offers a combination of features:fast page mode for high data bandwidth,fast usable speed,CMOS standby current and,on request,extended refresh for very low data retention power. Features of the V53C104B are:(1)256K*4-bit organization; (2)RAS access time:60,70,80ns; (3)low power dissipation for V53C104B-80;operating current:70mA max.;TTL standby current:2.0mAmax.; (4)low CMOS standby curent:1.0mA max; (5)read modify write,ras-only refresh,CAS-befor-RAS refresh capability; (6)common I/O capability; (7)refresh interval :512 cycles/8ms; (8)on-chip substrate bias generator; (9)fast page mode for a sustained data rate greater than 25MHz; (10)standard packages are 20pin plastic dip and 26/20 pin soj; (11)low battery back-up current 200A max. available on request.

The absolute maximum ratings of the V53C104B can be summarized as:(1)ambient temperature under bias:-10~80; (2)storage temperature (plastic):-55~125; (3)voltage relative to Vss:-1.0~7.0V; (4)data output current:50mA; (5)power dissipation:1.0W.

The electrical characteristics(Ta=25) of the V53C104B can be summarized as:(1)input leakage current(any input pin):-10~10A; (2)output leakage current(for high-z stage):-10~10A; (3)Vdd supply current,TTL standby:2.0mA; (4)Vdd supply current CMOS standby:1.0mA.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .




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