Features: 1M x 16-bit organizationEDO Page Mode for a sustained data rate of 50 MHzRAS access time: 50, 60, 70 nsDualCAS Inputs Low power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh, Hidden Refresh, andSelf Refresh.Refresh Interval: 1024 cycles/16 msAvailable in 42-pin 40...
V53C318165A: Features: 1M x 16-bit organizationEDO Page Mode for a sustained data rate of 50 MHzRAS access time: 50, 60, 70 nsDualCAS Inputs Low power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RA...
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DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C318165A is a 1048576 x 16 bit highperformance CMOS dynamic random access memory. The V53C318165A offers Page mode operation with Extended Data Output. The V53C318165A has an symmetric address, 10-bit row and 10-bit column.
All inputs are TTL compatible. EDO Page Mode operation allows random access up to 1024 x 16 bits, within a page, with cycle times as short as 20ns.
These features make the V53C318165A ideally suited for a wide variety of high performance computer systems and peripheral applications.