Features: 1MB x 16-bit organization EDO Page Mode for a sustained data rate of 50 MHzRAS access time: 50, 60 ns DualCAS Inputs Low power dissipation Read-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh • Refresh Interval: 1024 cycles/16 ms Available in 42-pin 400 mil SOJ and 44/50-pin ...
V53C518165A60: Features: 1MB x 16-bit organization EDO Page Mode for a sustained data rate of 50 MHzRAS access time: 50, 60 ns DualCAS Inputs Low power dissipation Read-Modify-Write, RAS-Only Refresh,CAS-Before-RA...
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Symbol |
Parameter |
Commercial |
Extended |
Units |
VN |
Power Supply Voltage |
-1 to +7 |
-1 to +7 |
V |
VDQ |
Input/Output Voltage to |
-0.5 to min (VCC+0.5, 7.0) -0.5 |
min (VCC+0.5, 7.0) |
V |
TBIAS |
Temperature Under Bias |
-10 to +125 |
-65 to +135 |
°C |
TSTG |
Storage Temperature |
-55 to +125 |
-65 to +150 |
°C |
The V53C518165A60 is a 1048576 x 16 bit highperformance CMOS dynamic random access memory. The V53C518165A offers Page mode operation with Extended Data Output. The V53C518165A has symmetric address, 10-bit row and 10-bit column.
All inputs are TTL compatible. EDO Page Mode operation allows random access up to 1024 x 16 bits, within a page, with cycle times as short as 20ns.
These features make the V53C518165A60 ideally suited for a wide variety of high performance computer systems and peripheral applications.