Features: 1M x 8-bit organization EDO Page Mode for a sustained data rate of 72 MHzRAS access time: 35, 40, 45, 50 nsLow power dissipation Read-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh capability Optional Self Refresh (V53C808SH) Refresh Interval: 1024 cycles/16 ms Available in 28-pin...
V53C808H: Features: 1M x 8-bit organization EDO Page Mode for a sustained data rate of 72 MHzRAS access time: 35, 40, 45, 50 nsLow power dissipation Read-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PinoutDescriptionThe V53C104AK-80 belongs to the V53C104A series.V53C104AK-80 is a high speed 262,...
DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C808H is a ultra high speed 1,048,576 x 8 bit CMOS dynamic random access memory. The V53C808H offers a combination of features: Page Mode with Extended Data Output for high data bandwidth, and Low CMOS standby current.
All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Page Mode with Extended Data Output operation allows random access of up to 1024 x 8 bits within a row with cycle times as fast as 14 ns.
The V53C808H is ideally suited for graphics, digital signal processing and high-performance computing systems.