Features: 4 banks x 4Mbit x 16 organization 4 banks x 8Mbit x 8 organization 4 banks x16Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pulsed RAS Interface Data Mask for Read/Write Control Fo...
V54C3256: Features: 4 banks x 4Mbit x 16 organization 4 banks x 8Mbit x 8 organization 4 banks x16Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all sig...
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Features: 4 banks x 4Mbit x 8 organizationHigh speed data transfer rates up to 143 MHzFull Synchro...
Operating temperature range..................0 to 70
Storage temperature range ................-55 to 150
Input/output voltage..................-0.3 to (VCC+0.3) V
Power supply voltage .......................... -0.3 to 4.6 V
Power dissipation ..............................................1 W
Data out current (short circuit).......................50 mA
*Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The V54C3256(16/80/40)4V(T/S/B) is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16, 4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The V54C3256(16/80/40)4V(T/S/B) achieves high speed data transfer rates up to 166 MHz by mploying a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock
All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.
Operating the four memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 166 MHz is possible depending on burst length, CAS latency and speed grade of the V54C3256.