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STW14NC50, STW14NK50Z, STW14NK60Z

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Info of STW14NC50
Info of STW14NK50Z
Info of STW14NK60Z

STW14NC50, STW14NK50Z, STW14NK60Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:9800 D/C:TO

STW14NC50, STW14NK50Z, STW14NK60Z Datasheet download

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Part Number: STW14NK50Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 9800

D/C: TO

Description: MOSFET N-CH 600V 13.5A TO-247

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STW14NC50 General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

STW14NC50 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	500	V
V_GS	Gate-Source Voltage	± 30	V
I_D	Drain Current (continuous) at T_c = 25	14	A
I_D	Drain Current (continuous) at T_c = 100	8.7	A
I_DM(`)	Drain Current (pulsed)	56	A
P_TOT	Total Dissipation at T_c = 25	190	W
	Derating Factor	1.5	W/
dv/dt(1)	Peak Diode Recovery voltage slope	3.5	V/ns
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(`) Pulse width limited by safe operating area (1) I_SD 14 A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX

STW14NC50 Typical Application

·SWITCH MODE POWER SUPPLIES (SMPS)
· HIGH CURRENT, HIGH SPEED SWITCHING
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

STW14NK50Z Parameters

Technical/Catalog Information	STW14NK50Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	380 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	92nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW14NK50Z STW14NK50Z 497 3258 5 ND 49732585ND 497-3258-5

STW14NK50Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STW14NK50Z Maximum Ratings

Symbol	Parameter	Value			Unit
Symbol	Parameter	STP14NK50Z STB14NK50Z/-1	STP14NK50ZFP	STW14NK50Z	Unit
V_DS	Drain-source Voltage (V_GS = 0)	500			V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	500			V
V_GS	Gate- source Voltage	± 30			V
I_D	Drain Current (continuos) at T_C = 25	14	14(^*)	14	A
I_D	Drain Current (continuos) at T_C = 100	7.6	7.6^(*)	7.6	A
I_DM()	Drain Current (pulsed)	48	48(^*)	48	A
P_TOT	Total Dissipation at T_C = 25	150	35	150	W
	Derating Factor	1.20	0.28	1.20	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

() Pulse width limited by safe operating area
(1) I_SD 14A, di/dt200A/s, V_DDV_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed

STW14NK50Z Features

` TYPICAL R_DS(on) = 0.34
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STW14NK50Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING

STW14NK60Z Parameters

Technical/Catalog Information	STW14NK60Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	13.5A
Rds On (Max) @ Id, Vgs	500 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds	2220pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW14NK60Z STW14NK60Z

STW14NK60Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STW14NK60Z Maximum Ratings

</TABLE

Symbol	Parameter	Value		Unit
Symbol	Parameter	STP15NK50Z STB15NK50Z STB15NK50Z-1	STP15NK50ZFP	Unit
V_DS	Drain-source Voltage (V_GS = 0)	600		V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	600		V
V_GS	Gate- source Voltage	±30		V
I_D	Drain Current (continuos) at T_C = 25	13.5	13.5(^*)	A
I_D	Drain Current (continuos) at T_C = 100	8.5	8.5(^*)	A
I_DM(`)	Drain Current (pulsed)	54	54(^*)	A
P_TOT	Total Dissipation at T_C = 25	160	40	W
	Derating Factor	1.28	0.32	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5		V/ns
V_ISO	Insulation Withstand Voltage (DC)	--	2500	V
T_{j T_stg}	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 13.5A, di/dt 200 A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed

STW14NK60Z Features

` TYPICAL R_DS(on) = 0.45
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STW14NK60Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
· LIGHTING

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