MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:08+/09+
STW10N80, STW10NK80Z, STW11NB80 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO-3P
D/C: 08+/09+
Description: MOSFET N-CH 800V 9A TO-247
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PDF/DataSheet Download
Datasheet: STW10NA50
File Size: 248884 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW10NK80Z
File Size: 469824 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STW11NB80
File Size: 89468 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STW10NK80Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 2180pF @ 25V |
| Power - Max | 160W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW10NK80Z STW10NK80Z 497 3254 5 ND 49732545ND 497-3254-5 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | ||
|
STP10NK80Z |
STP10NK80ZFP |
STW10NK80Z |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | ||
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V | ||
|
VGS |
Gate-Source Voltage |
± 30 |
V | ||
|
ID |
Drain Current (continuous) at Tc = 25 |
9 |
9 (*) |
9 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
6 |
6 (*) |
6 |
A |
|
IDM(`) |
Drain Current (pulsed) |
36 |
36 (*) |
36 |
A |
|
PTOT(1) |
Total Dissipation at Tc = 25 |
160 |
40 |
160 |
W |
|
Derating Factor |
1.28 |
0.32 |
1.28 |
W/ | |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4 |
KV | ||
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO |
Insulation Withstand Voltage (DC) |
2500 |
V | ||
|
Tstg
Tj |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| ||
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
800 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
11 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
6.9 | A |
| IDM(•) |
Drain Current (pulsed) |
44 | A |
| PTOT |
Total Dissipation at Tc = 25 |
190 | W |
|
Derating Factor |
1.52 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
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